| PART |
Description |
Maker |
| CHA2159 CHA2159-15 |
55-65GHz Low Noise / Medium Power Amplifier
|
United Monolithic Semic...
|
| TC1101V |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| TC1101 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| AFM04P3-000 |
Low Noise/Medium Power GaAs MESFET Chip
|
Alpha Industries Inc
ALPHA[Alpha Industries]
|
| TC2381 |
Low Noise and Medium Power Packaged GaAs FETs
|
Transcom, Inc.
|
| 2SC5509-A 2SC5509-T2 2SC5509-T2-A |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
|
Renesas Electronics Corporation
|
| 2SC5347 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications 高频半功率输出级，低噪声输出放大器中的应
High-Frequency Semi-Power Output Stage/ Low-Noise Medium Output Amplifiers Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| CFS0103-SB08 CFS0103-SB-0G00 |
0.1-10.0 GHz Low Noise, Medium Power
X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
MIMIX BROADBAND INC
|
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-S |
0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package 0.1-10.0 GHz的低噪声，中等功率的表面贴装塑料包装pHEMT
|
Mimix Broadband, Inc.
|
| BAT14-098 BAT14_98 Q62702-A0960 |
From old datasheet system
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
